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Hall Effect Measurements

Accurate determination of:

 

Charge carrier type (n-type or p-type)

 

Carrier concentration (cm⁻³)

 

Mobility (cm²/V·s)

 

Resistivity and sheet carrier density

Measurements available at room temperature or variable temperature conditions.

 Sample Types We Support:

Thin films on conductive or insulating substrates

 

Nanostructured materials and nanowires

 

Bulk semiconductors and single crystals

 

Composites and polymer-based materials

 

Gas sensor and photodetector devices

 

Equipment and Setup Options:

Four-point probe station (manual/automated)

 

Source Measure Units (SMUs) for I–V/C–V testing

 

Hall effect system with magnetic field up to 1 Tesla

 

LCR meters (precision, high-frequency range)

 

Impedance analyzer with customized test cells

 

Probe stations with light sources (LED, laser, solar simulators)

 

Temperature-controlled stages (room temperature to 200 °C or higher on request)

 

Applications:

Semiconductor device analysis

 

Sensor material optimization

 

Energy storage and conversion devices (batteries, supercapacitors, fuel cells)

 

Functional oxide and ferroelectric studies

 

Thin film and coating quality control

 

Reliability and failure analysis in electronic materials