At Photon Center, we offer in-depth analysis of electrical properties for a wide range of materials, including thin films, nanostructures, bulk semiconductors, composites, and functional oxides. Understanding electrical behavior is essential for developing advanced materials in electronics, sensors, optoelectronics, and energy devices.
Electrical Conductivity (σ)
Direct measurement of how easily electrons flow through a material under different conditions (temperature, humidity, doping, etc.).
Resistivity (ρ) and Sheet Resistance (Rs)
Crucial for evaluating thin films and layered materials. We provide four-point probe and van der Pauw techniques for high accuracy.
Current–Voltage (I–V) Characteristics
Used to study diodes, transistors, Schottky junctions, and photovoltaic devices. Enables analysis of:
Ohmic vs. rectifying behavior
Threshold voltages
Leakage currents
Non-linearity and switching effects
Capacitance–Voltage (C–V) Measurements
Important for characterizing:
Doping profiles in semiconductors
Dielectric constant and interface states
MIS and MOS capacitor behavior
Four-point probe station (manual/automated)
Source Measure Units (SMUs) for I–V/C–V testing
Hall effect system with magnetic field up to 1 Tesla
LCR meters (precision, high-frequency range)
Impedance analyzer with customized test cells
Probe stations with light sources (LED, laser, solar simulators)
Temperature-controlled stages (room temperature to 200 °C or higher on request)
Semiconductor device analysis
Sensor material optimization
Energy storage and conversion devices (batteries, supercapacitors, fuel cells)
Functional oxide and ferroelectric studies
Thin film and coating quality control
Reliability and failure analysis in electronic materials